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d a t a sh eet product speci?cation august 1986 discrete semiconductors blw96 hf/vhf power transistor
august 1986 2 philips semiconductors product speci?cation hf/vhf power transistor blw96 description n-p-n silicon planar epitaxial transistor intended for use in class-a, ab and b operated high power industrial and military transmitting equipment in the h.f. and v.h.f. band. the transistor presents excellent performance as a linear amplifier in s.s.b. applications. it is resistance stabilized and is guaranteed to withstand severe load mismatch conditions. transistors are supplied in matched h fe groups. the transistor has a 1 2 " flange envelope with a ceramic cap. all leads are isolated from the flange. quick reference data r.f. performance up to t h =25 c note 1. h dt at 200 w p.e.p. mode of operation v ce v f mhz p l w g p db h % d 3 db d 5 db i c(zs) (i c ) a s.s.b. (class-ab) 50 1,6 - 28 25 - 200 (p.e.p.) > 13,5 > 40 (1) <- 30 <- 30 0,1 c.w. (class-b) 50 108 200 typ. 6,5 typ. 67 -- (6) s.s.b. (class-a) 40 28 50 (p.e.p.) typ. 19 - typ. - 40 <- 40 (4) pin configuration fig.1 simplified outline. sot121b. handbook, halfpage mla876 43 2 1 pinning - sot121b. pin description 1 collector 2 emitter 3 base 4 emitter product safety this device incorporates beryllium oxide, the dust of which is toxic. the device is entirely safe provided that the beo disc is not damaged.
august 1986 3 philips semiconductors product speci?cation hf/vhf power transistor blw96 ratings limiting values in accordance with the absolute maximum system (iec 134) collector-emitter voltage (v be =0) peak value v cesm max. 110 v collector-emitter voltage (open base) v ceo max. 55 v emitter-base voltage (open collector) v ebo max. 4 v collector current (average) i c(av) max. 12 a collector current (peak value); f > 1 mhz i cm max. 40 a r.f. power dissipation (f > 1 mhz); t mb =45 cp rf max. 340 w storage temperature t stg - 65 to + 150 c operating junction temperature t j max. 200 c fig.2 d.c. soar. handbook, halfpage mgp685 10 2 10 1 10 10 2 i c (a) v ce (v) t mb = 45 c t h = 70 c fig.3 power/temperature derating curves. i continuous d.c. operation ii continuous r.f. operation; f > 1 mhz iii short-time operation during mismatch; f > 1 mhz handbook, halfpage 0 50 100 150 400 300 100 0 200 mgp686 p tot (w) t h ( c) ii i iii derate by 1.58 w/k 1.35 w/k thermal resistance (dissipation = 150 w; t mb = 100 c, i.e. t h =70 c) from junction to mounting base (d.c. dissipation) r th j-mb(dc) = 0,63 k/w from junction to mounting base (r.f. dissipation) r th j-mb(rf) = 0,45 k/w from mounting base to heatsink r th mb-h = 0,2 k/w
august 1986 4 philips semiconductors product speci?cation hf/vhf power transistor blw96 characteristics t j =25 c notes 1. measured under pulse conditions: t p 300 m s; d 0,02. 2. measured under pulse conditions: t p 50 m s; d 0,01. collector-emitter breakdown voltage v be =0;i c =50ma v (br)ces > 110 v collector-emitter breakdown voltage open base; i c = 200 ma v (br)ceo > 55 v emitter-base breakdown voltage open collector; i e =20ma v (br)ebo > 4v collector cut-off current v be =0;v ce =55v i ces < 10 ma second breakdown energy; l = 25 mh; f = 50 hz open base e sbo > 20 mj r be =10 w e sbr > 20 mj d.c. current gain (1) typ. 15 to 30 50 i c = 7 a; v ce =5 v h fe d.c. current gain ratio of matched devices (1) i c = 7 a; v ce =5v h fe1 /h fe2 1,2 collector-emitter saturation voltage (1) i c = 20 a; i b = 4 a v cesat typ. 1,9 v transition frequency at f = 100 mhz (2) - i e = 7 a; v cb = 45 v f t typ. 235 mhz - i e = 20 a; v cb = 45 v f t typ. 245 mhz collector capacitance at f = 1 mhz i e =i e = 0; v cb =50v feedback capacitance at f = 1 mhz c c typ. 280 pf i c = 150 ma; v ce =50v c re typ. 170 pf collecting-?ange capacitance c cf typ. 4,4 pf
august 1986 5 philips semiconductors product speci?cation hf/vhf power transistor blw96 fig.4 typical values; v ce = 40 v. handbook, halfpage 1250 500 1000 750 10 1 10 - 1 10 - 2 mgp687 v be (mv) - i e (a) t h = 70 c 25 c fig.5 typical values; t j =25 c. handbook, halfpage 010 i c (a) 30 50 0 40 mgp688 20 30 20 10 h fe v ce = 45 v 15 v 5 v fig.6 typical values; f = 100 mhz; t j =25 c. handbook, halfpage 0 102030 300 f t (mhz) 0 100 200 mgp689 - i e (a) 15 v v cb = 45 v 5 v fig.7 i e =i e = 0; f = 1 mhz; t j =25 c. handbook, halfpage 0 255075 1000 750 250 0 500 mgp690 c c (pf) v cb (v) typ
august 1986 6 philips semiconductors product speci?cation hf/vhf power transistor blw96 application information r.f. performance in s.s.b. class-ab operation (linear power ampli?er) v ce = 50 v; t h =25 c; f 1 = 28,000 mhz; f 2 = 28,001 mhz list of components: notes 1. stated intermodulation distortion figures are referred to the according level of either of the equal amplified tones. relative to the according peak envelope powers these figures should be increased by 6 db. 2. atc means american technical ceramics. output power g p h dt (%) i c (a) d 3 (1) d 5 (1) i c(zs) w db at 200 w (p.e.p.) db db a 25 to 200 (p.e.p.) > 13,5 > 40 < 5,0 <- 30 < - 30 0,1 c1 = c4 = c10 = c14 = 100 pf ?lm dielectric trimmer c2 = 27 pf ceramic capacitor (500 v) c3 = 270 pf polysterene capacitor (630 v) c5 = c7 = c8 = 220 nf multilayer ceramic chip capacitor c6 = 27 pf multilayer ceramic chip capacitor (500 v; atc (2) ) c9 = 47 m f/63 v electrolytic capacitor c11 = 2 36 pf multilayer ceramic chip capacitors (500 v; atc (2) ) in parallel c12 = 2 43 pf multilayer ceramic chip capacitors (500 v; atc (2) ) in parallel c13 = 43 pf multilayer ceramic chip capacitor (500 v; atc (2) ) l1 = 88 nh; 3 turns cu wire (1,0 mm); int. dia. 9,0 mm; length 6,1 mm; leads 2 5 mm l2 = ferroxcube wide-band h.f. choke, grade 3b (cat. no. 4312 020 36640) l3 = 150 nh; 5 turns cu wire (2,0 mm); int. dia. 10,0 mm; length 18,7 mm; leads 2 5 mm l4 = 197 nh; 5 turns cu wire (2,0 mm); int. dia. 12,0 mm; length 18,6 mm; leads 2 5 mm r1 = 0,66 w ; parallel connection of 5 3,3 w metal ?lm resistors (pr37; 5%; 1,6 w each) r2 = 27 w carbon resistor ( 5%; 0,5 w) fig.8 test circuit; s.s.b. class-ab. handbook, full pagewidth 50 w mgp691 c9 c5 c8 c7 l2 l1 r1 r2 l4 t.u.t. l3 c11 c14 temperature compensated bias (r i < 0.1 w ) c10 c2 c1 c4 c6 c3 + v cc c12 c13 50 w
august 1986 7 philips semiconductors product speci?cation hf/vhf power transistor blw96 fig.9 intermodulation distortion as a function of output power. (1) handbook, halfpage 0 100 200 300 - 25 d 3 , d 5 (db) - 45 - 35 mgp692 d 3 d 5 p.e.p. (w) v ce = 50 v; i c(zs) = 0,1 a; f 1 = 28,000 mhz; f 2 = 28,001 mhz; t h =25 c; typical values. fig.10 double-tone efficiency and power gain as a function of output power. handbook, halfpage 0 100 p.e.p. (w) 300 100 0 75 mgp693 200 50 25 20 0 15 10 5 h dt (%) g p (db) h dt g p v ce = 50 v; i c(zs) = 0,1 a; f 1 = 28,000 mhz; f 2 = 28,001 mhz; t h =25 c; typical values. ruggedness the blw96 is capable of withstanding full load mismatch (vswr = 50 through all phases) up to 150 w (p.e.p.) or a load mismatch (vswr = 5 through all phases) up to 200 w (p.e.p.) under the following conditions: v ce = 45 v; f = 28 mhz; t h =70 c; r th mb-h = 0,2 k/w.
august 1986 8 philips semiconductors product speci?cation hf/vhf power transistor blw96 fig.11 power gain as a function of frequency. handbook, halfpage 30 0 mgp694 11010 2 10 20 g p (db) f (mhz) v ce = 50 v; i c(zs) = 0,1 a; p l = 200 w (p.e.p.); t h =25 c; z l =5 w ; neutralizing capacitor: 47 pf fig.12 input impedance (series components) as a function of frequency. a ndbook, halfpage 4 0 mgp695 11010 2 1 2 3 r i , - x i ( w ) f (mhz) r i - x i - x i r i v ce = 50 v; i c(zs) = 0,1 a; p l = 200 w (p.e.p.); t h =25 c; z l =5 w ; neutralizing capacitor: 47 pf figs 11 and 12 are typical curves and hold for one transistor of a push-pull amplifier with cross-neutralization in s.s.b. class-ab operation.
august 1986 9 philips semiconductors product speci?cation hf/vhf power transistor blw96 r.f. performance in c.w. operation (unneutralized common-emitter class-b circuit) t h = 25 c f (mhz) v ce (v) p l (w) p s (w) g p (db) i c (a) h (%) 108 50 200 typ. 45 typ. 6,5 typ. 6 typ. 67 fig.13 v ce = 50 v; f = 108 mhz; t h =25 c. handbook, halfpage 0 255075 400 300 100 0 200 mgp696 p l (w) p s (w) typ fig.14 v ce = 50 v; f = 108 mhz; t h =25 c; typical values. handbook, halfpage 0 100 200 300 10 7.5 2.5 0 5 100 75 25 0 50 mgp697 g p (db) p l (w) g p h h (%)
august 1986 10 philips semiconductors product speci?cation hf/vhf power transistor blw96 fig.15 input impedance (series components). handbook, halfpage 25 125 1 0 - 0.5 0.5 mgp698 75 r i , x i ( w ) f (mhz) r i x i typical values; v ce = 50 v; p l = 200 w; t h =25 c; class-b operation fig.16 load impedance (series components). handbook, halfpage 25 125 6 0 2 4 mgp699 75 r l , x l ( w ) f (mhz) x l r l typical values; v ce = 50 v; p l = 200 w; t h =25 c; class-b operation fig.17 handbook, halfpage 25 125 20 0 mgp700 10 g p (db) 75 f (mhz) typical values; v ce = 50 v; p l = 200 w; t h =25 c; class-b operation
august 1986 11 philips semiconductors product speci?cation hf/vhf power transistor blw96 r.f. performance in s.s.b. class-a operation (linear power ampli?er) v ce = 40 v; t h =25 c; f 1 = 28,000 mhz; f 2 = 28,001 mhz list of components: note 1. stated intermodulation distortion figures are referred to the according level of either of the equal amplified tones. relative to the according peak envelope powers these figures should be increased by 6 db. output power w g p db i c a d 3 (1) db d 5 (1) db typ. 50 (p.e.p.) typ. 19 4 typ. - 40 < - 40 c1 = c2 = 10 to 780 pf ?lm dielectric trimmer c3 = 220 nf polyester capacitor (100 v) c4 = 100 m f/4 v electrolytic capacitor c5 = 2 330 nf polyester capacitors (100 v) in parallel c6 = 47 m f/63 v electrolytic capacitor c7 = c10 = 2 82 pf ceramic capacitors (500 v) in parallel c8 = c9 = 10 to 150 pf air dielectric trimmer l1 = 45 nh; 2 turns enamelled cu wire (1,6 mm); int. dia. 8,0 mm; length 4,0 mm; leads 2 3 mm l2 = ferroxcube wide-band h.f. choke, grade 3b (cat. no. 4312 020 36640) l3 = 110 nh; 4 turns enamelled cu wire (2,0 mm); int. dia. 10,0 mm; length 8,0 mm; leads 2 2mm l4 = 210 nh; 5 turns enamelled cu wire (2,0 mm); int. dia. 12,0 mm; length 10,0 mm; leads 2 2 mm r1 = 27 w carbon resistor ( 5%; 0,5 w) fig.18 test circuit; s.s.b. class-a. handbook, full pagewidth 50 w mgp701 50 w c4 c3 c5 c6 l2 l1 c1 r1 l4 t.u.t. c10 c8 c7 c9 c2 + v cc + v bb l3
august 1986 12 philips semiconductors product speci?cation hf/vhf power transistor blw96 fig.19 third order intermodulation distortion as a function of output power. (1) typical values; v ce =40v; t h =25 c; f 1 = 28,000 mhz; f 2 = 28,001 mhz. handbook, full pagewidth 100 - 30 - 60 020 80 mgp702 40 60 - 50 - 40 d 3 (db) p.e.p. (w) i c = 3 a 4 a 5 a
august 1986 13 philips semiconductors product speci?cation hf/vhf power transistor blw96 package outline references outline version european projection issue date iec jedec eiaj sot121b 97-06-28 0 5 10 mm scale flanged ceramic package; 2 mounting holes; 4 leads sot121b 12 43 u 3 d 1 u 2 h h l b q d u 1 q a f c p w 1 m m w 2 b c c a ab a 0.51 unit a mm d b 5.82 5.56 0.16 0.10 12.86 12.59 12.83 12.57 28.45 25.52 3.30 3.05 6.48 6.22 7.27 6.17 c d 1 u 3 u 2 12.32 12.06 1.02 w 1 w 2 45 a l 7.93 6.32 u 1 24.90 24.63 q 4.45 3.91 q 18.42 f 2.67 2.41 0.02 inches 0.229 0.219 0.006 0.004 0.506 0.496 0.505 0.495 1.120 1.005 0.130 0.120 0.255 0.245 0.286 0.243 0.485 0.475 0.04 0.312 0.249 0.98 0.97 0.175 0.154 0.725 0.105 0.095 p h dimensions (millimetre dimensions are derived from the original inch dimensions)
august 1986 14 philips semiconductors product speci?cation hf/vhf power transistor blw96 definitions life support applications these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips for any damages resulting from such improper use or sale. data sheet status objective speci?cation this data sheet contains target or goal speci?cations for product development. preliminary speci?cation this data sheet contains preliminary data; supplementary data may be published later. product speci?cation this data sheet contains ?nal product speci?cations. limiting values limiting values given are in accordance with the absolute maximum rating system (iec 134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the speci?cation is not implied. exposure to limiting values for extended periods may affect device reliability. application information where application information is given, it is advisory and does not form part of the speci?cation.

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